Nanotwins and stacking faults in high-strength epitaxial Ag/Al multilayer films

被引:104
作者
Bufford, D. [1 ]
Bi, Z. [2 ]
Jia, Q. X. [2 ]
Wang, H. [3 ]
Zhang, X. [1 ]
机构
[1] Texas A&M Univ, Dept Mech Engn, Mat Sci & Engn Program, College Stn, TX 77843 USA
[2] Los Alamos Natl Lab, MPA CINT, Los Alamos, NM 87522 USA
[3] Texas A&M Univ, Dept Elect & Comp Engn, Mat Sci & Engn Program, College Stn, TX 77843 USA
基金
美国国家科学基金会;
关键词
MOLECULAR-DYNAMICS SIMULATION; CENTERED-CUBIC METALS; THIN-FILMS; NANOCRYSTALLINE ALUMINUM; DEFORMATION MECHANISMS; FCC METALS; TWINS; ENERGY; COPPER; AL;
D O I
10.1063/1.4768000
中图分类号
O59 [应用物理学];
学科分类号
摘要
Epitaxial Ag/Al multilayer films have high hardness (up to 5.5 GPa) in comparison to monolithic Ag and Al films (2 and 1 GPa). High-density nanotwins and stacking faults appear in both Ag and Al layers, and stacking fault density in Al increases sharply with decreasing individual layer thickness, h. Hardness increases monotonically with decreasing h, with no softening. In comparison, epitaxial Cu/Ni multilayers reach similar peak hardness when h approximate to 5 nm, but soften at smaller h. High strength in Ag/Al films is primarily a result of layer interfaces, nanotwins, and stacking faults, which are strong barriers to dislocation transmission. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4768000]
引用
收藏
页数:5
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