True two-phase CCD image sensors employing a transparent gate

被引：5

作者：

Des Jardin, W ^{[1
]}

Kosman, S ^{[1
]}

机构：

[1] Eastman Kodak Co, Rochester, NY 14650 USA

来源：

SENSORS, CAMERAS, AND SYSTEMS FOR SCIENTIFIC/INDUSTRIAL APPLICATIONS | 1999年 / 3649卷

关键词：

charge coupled device; CCD; image sensor; transparent;

D O I：

10.1117/12.347063

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

This paper describes the performance of a family of full-frame sensor designs where a transparent electrode replaces one of the polysilicon gates. The sensors are all fabricated with a true two-phase buried channel CCD process that is optimized for operation in multi-pinned phase (MPP) mode for low dark current. The true two-phase architecture provides many advantages such as progressive scan, square pixels, high charge capacity, and simplified drive requirements. The uncomplicated structure allows large area arrays to be fabricated with reasonable yield. Inclusion of a transparent gate increases the response by a factor of 10 at 400 nm and 50% at 600 nm.

引用

页码：74 / 79

页数：6