Theory of gain in group-III nitride lasers

被引：4

作者：

Chow, WW

Wright, AF

Girndt, A

Jahnke, F

Koch, SW

机构：

来源：

GALLIUM NITRIDE AND RELATED MATERIALS II | 1997年 / 468卷

关键词：

D O I：

10.1557/PROC-468-487

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A microscopic theory of gain in a group-III nitride quantum well laser is presented. The approach, which treats carrier correlations at the level of quantum kinetic theory, gives a consistent account of plasma and excitonic effects in an inhomogeneously broadened system.

引用

页码：487 / 494

页数：8