Thermoelectric properties of crystallized boron carbide thin films prepared by ion-beam evaporation

被引：19

作者：

Suematsu, H ^{[1
]}

Kitajima, K ^{[1
]}

Ruiz, I ^{[1
]}

Kobayashi, K ^{[1
]}

Takeda, M ^{[1
]}

Shimbo, D ^{[1
]}

Suzuki, T ^{[1
]}

Jiang, W ^{[1
]}

Yatsui, K ^{[1
]}

机构：

[1] Nagaoka Univ Technol, Dept Mech Engn, Extreme Energy Dens Res Inst, Nagaoka, Niigata 9402188, Japan

来源：

THIN SOLID FILMS | 2002年 / 407卷 / 1-2期

关键词：

boron carbide; ion bombardment; evaporation; electrical properties and measurements;

D O I：

10.1016/S0040-6090(02)00026-3

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of B12+xC3-x have been successfully prepared by the pulsed ion-beam evaporation (IBE) method on glass substrates without substrate heating or sample annealing. B12+xC3-x bulk targets with nominal carbon contents Of x = 0-1.0 were synthesized by spark plasma sintering. Thin films prepared with the targets were found to consist of a B12+xC3-x phase and lattice parameters of the phase were comparable to that of the target. From these results, it has been found that B12+xC3-x thin films with various carbon contents were successfully prepared at room temperature, The thermoelectric properties of the thin films were measured and the B13.0C2.0 thin film exhibited the highest power factor at room temperature among the B12+xC3-x samples reported. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：132 / 135

页数：4

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