Silicon carbide powder synthesis from silicon monoxide and methane

SiC was synthesized via the gas-phase reaction between SiO and CH4 at 1500 degrees and 1560 degrees C in a tubular flow reactor. SiO vapor was generated from equimolar powder mixtures of Si and SiO2 in the reactor while CH4 was externally supplied, Products of different morphologies were collected at different longitudinal locations: whiskers, crystal aggregates, scale, and powder, The total yield of SiC, based on the amount of SiO generated, reached as high as 99%, of which 25-46% by mass was fine powder with sizes ranging from 60 to 300 nm.