The solution-processability of organic photodetectors allows a straightforward combination with other materials, including inorganic ones, without increasing cost and process complexity significantly compared with conventional crystalline semiconductors. Although the optoelectronic performance of these organic devices does not outmatch their inorganic counterparts, there are certain applications exploiting the benefit of the solution-processability. Here we demonstrate that the small pixel fill factor of present complementary metal oxide semiconductor-imagers, decreasing the light sensitivity, can be increased up to 100% by replacing silicon photodiodes with an organic photoactive layer deposited with a simple low-cost spray-coating process. By performing a full optoelectronic characterization on this first solution-processable hybrid complementary metal oxide semiconductor-imager, including the first reported observation of different noise types in organic photodiodes, we demonstrate the suitability of this novel device for imaging. Furthermore, by integrating monolithically different organic materials to the chip, we show the cost-effective portability of the hybrid concept to different wavelength regions.
Baierl D., 2011, Proceedings of the 2011 7th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), P89, DOI 10.1109/PRIME.2011.5966224
机构:
Univ Milano Bicocca, Dept Mat Sci, I-20125 Milan, Italy
Univ Milano Bicocca, INSTM, I-20125 Milan, ItalyUniv Milano Bicocca, Dept Mat Sci, I-20125 Milan, Italy
机构:Carl von Ossietzky Univ Oldenburg, Dept Phys, Energy & Semicond Res Lab, D-26111 Oldenburg, Germany
Chirvase, D
;
Parisi, J
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机构:Carl von Ossietzky Univ Oldenburg, Dept Phys, Energy & Semicond Res Lab, D-26111 Oldenburg, Germany
Parisi, J
;
Hummelen, JC
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机构:Carl von Ossietzky Univ Oldenburg, Dept Phys, Energy & Semicond Res Lab, D-26111 Oldenburg, Germany
Hummelen, JC
;
Dyakonov, V
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Carl von Ossietzky Univ Oldenburg, Dept Phys, Energy & Semicond Res Lab, D-26111 Oldenburg, GermanyCarl von Ossietzky Univ Oldenburg, Dept Phys, Energy & Semicond Res Lab, D-26111 Oldenburg, Germany
Baierl D., 2011, Proceedings of the 2011 7th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), P89, DOI 10.1109/PRIME.2011.5966224
机构:
Univ Milano Bicocca, Dept Mat Sci, I-20125 Milan, Italy
Univ Milano Bicocca, INSTM, I-20125 Milan, ItalyUniv Milano Bicocca, Dept Mat Sci, I-20125 Milan, Italy
机构:Carl von Ossietzky Univ Oldenburg, Dept Phys, Energy & Semicond Res Lab, D-26111 Oldenburg, Germany
Chirvase, D
;
Parisi, J
论文数: 0引用数: 0
h-index: 0
机构:Carl von Ossietzky Univ Oldenburg, Dept Phys, Energy & Semicond Res Lab, D-26111 Oldenburg, Germany
Parisi, J
;
Hummelen, JC
论文数: 0引用数: 0
h-index: 0
机构:Carl von Ossietzky Univ Oldenburg, Dept Phys, Energy & Semicond Res Lab, D-26111 Oldenburg, Germany
Hummelen, JC
;
Dyakonov, V
论文数: 0引用数: 0
h-index: 0
机构:
Carl von Ossietzky Univ Oldenburg, Dept Phys, Energy & Semicond Res Lab, D-26111 Oldenburg, GermanyCarl von Ossietzky Univ Oldenburg, Dept Phys, Energy & Semicond Res Lab, D-26111 Oldenburg, Germany