Enhanced hole transport in C60-doped hole transport layer

被引：26

作者：

Lee, JY

Kwon, JH ^{[1
]}

机构：

[1] Dankook Univ, Dept Polymer Sci & Engn, Seoul 140714, South Korea

[2] Kyunghee Univ, Dept Informat Display, Seoul 130701, South Korea

来源：

APPLIED PHYSICS LETTERS | 2006年 / 88卷 / 18期

关键词：

D O I：

10.1063/1.2172296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The carrier mobility of C60-doped hole transport layer was investigated according to the C60 content. The addition of C60 in the 1, 3, 5-tris (N, N-bis-(4,5-methoxyphenyl)-aminophenyl) benzol (TDAPB) hole transport material resulted in the increase of hole mobility of TDAPB. The C60 molecule acted as a p-type dopant in the hole transport layer, resulting in the improved hole transport in TDAPB. The hole mobility of C60-doped TDAPB was 9.0x10(-4) cm(2)/Vs compared with 1.0x10(-4) cm(2)/Vs for nondoped TDAPB.

引用

页数：3

共 16 条

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