Variable-gain power amplifier for mobile WCDMA applications

被引：19

作者：

Vintola, VTS ^{[1
]}

Matilainen, MJ

Kalajo, SJK

Järvinen, EA

机构：

[1] Nokia Mobile Phones, Helsinki 00180, Finland

[2] Nokia Res Ctr, Helsinki 00180, Finland

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2001年 / 49卷 / 12期

关键词：

application-specific integrated circuits; GaAsHBT; gain control; integrated circuit design; linear circuits; microwave integrated circuits; power amplifier;

D O I：

10.1109/22.971637

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A single-chip linear power amplifier (PA) with > 48-dB gain control range and > 24-dBm output power with adjacent channel leakage power below -36 dBc is presented. The chip is realized using an AlGaAs/GaAs heterojunction-bipolar-transistor process and is aimed for 1.95-GHz mobile WCDMA applications. The amplifier consists of two blocks, the variable-gain amplifier, and the PA. The chip size is 1.3 x 1.1 mm(2) and it is mounted on an 8 x 8 mm(2) FR-4 type laminate with 26 pieces of 0402 Surface-mountable discrete components composing a complete 50-Omega input-output amplifier module. This paper presents the design of the two blocks, discusses issues related to their combining, and presents complete amplifier realization and measurement results.

引用

页码：2464 / 2471

页数：8

共 7 条

[1]

Asano H, 1998, IEEE MTT S INT MICR, P205, DOI 10.1109/MWSYM.1998.689357

[2]

CRIPPS SC, 1999, RF POWER AMPLIFERS W

[3] GaAs HBT power amplifier with smooth gain control characteristics [J].