Growth of high-quality InN using low-temperature intermediate layers by RF-MBE

被引：44

作者：

Saito, Y

Yamaguchi, T

Kanazawa, H

Kano, K

Araki, T

Nanishi, Y

Teraguchi, N

Suzuki, A

机构：

[1] Ritsumeikan Univ, Dept Photon, Shiga 5258577, Japan

[2] Sharp Co Ltd, Adv Tech Res Labs, Tenri, Nara 6328567, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷 / 1-4 II期

关键词：

surfaces; single crystal growth; molecular beam epitaxy; nitrides; sapphire;

D O I：

10.1016/S0022-0248(01)02119-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

InN with a film thickness of 600 run was grown on a (0 0 0 1) sapphire substrate using low-temperature-grown intermediate layers by radio frequency plasma-excited molecular beam epitaxy (RF-MBE). From SEM observation, it was found that InN films with uniform surface morphology were grown. The electron mobility at room temperature obtained in this study was 830 cm(2)/VS and the corresponding carrier density was 1.0 X 10(19) cm(-3). To our knowledge, this electron mobility is the highest value ever reported for single-crystal InN films. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：1017 / 1021

页数：5

共 5 条

[1]

FORTZ BE, 1999, J APPL PHYS, V85, P7727

[2] THERMAL STABILITY OF INDIUM NITRIDE AT ELEVATED TEMPERATURES AND NITROGEN PRESSURES [J].