Growth of lead chalcogenide thin films using single-source precursors

被引:82
作者
Afzaal, M
Ellwood, K
Pickett, NL
O'Brien, P
Raftery, J
Waters, J
机构
[1] Univ Manchester, Manchester Mat Sci Ctr, Manchester M13 9PL, Lancs, England
[2] Univ Manchester, Dept Chem, Manchester M13 9PL, Lancs, England
关键词
D O I
10.1039/b313063k
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A series of lead dithiocarbamato complexes, [Pb(S2CNRR')(2)] (R = Me, Et; R' = Pr-i, Bu-n) and dichalcogenoimidodiphoshanto complexes, [Pb(((EPPr2)-Pr-i)(2)N)(2)] (E = S, Se) have been synthesised and characterised. These compounds have been employed as single-source precursors for the growth of lead chalcogenide thin films by aerosol-assisted chemical vapour deposition (AACVD) and low-pressure metal organic chemical vapour deposition (LP-MOCVD) on glass substrates. X-Ray powder diffraction (XRPD) studies show that the films are composed of cubic PbS/Se. The solid-state structures of the symmetrically substituted complexes, [Pb(S2CNR2)(2)] (R = C6H10, C5H11), have been determined by single-crystal X-ray crystallography.
引用
收藏
页码:1310 / 1315
页数:6
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