Mechanical behaviour of submicron multilayers submitted to microtensile experiments

被引:16
作者
Ignat, M [1 ]
Marieb, T
Fujimoto, H
Flinn, PA
机构
[1] Ecole Natl Super Electrochim & Electrome Grenoble, Inst Natl Polytech Grenoble, F-38402 St Martin Dheres, France
[2] Intel Components Res, Santa Clara, CA 95052 USA
[3] Stanford Univ, Dept Mat Sci, Stanford, CA 94305 USA
关键词
adhesion; interfaces; metallization; stress;
D O I
10.1016/S0040-6090(99)00397-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The mechanical strength of layers used in microelectronic circuits is not well understood. In this study in situ microtensile tests were performed in a scanning electron microscope on various multilayers of Al-0.5%Cu, Ti and TiN deposited on a Ti substrate. Film fracture occurred in two distinct modes, either perpendicular to the loading or at a 45 degrees angle to the loading direction. Samples were loaded until the cracked films began to debond from the substrate. By using X-ray diffraction (XRD) and energy dispersive spectroscopy (EDS) the weak interface was determined to be the Al to Ti interface. The strength of this interface was calculated to be 0.5 J/m(2), which is in good agreement with theoretical predictions. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:201 / 207
页数:7
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