Growth of cubic InN on InAs(001) by plasma-assisted molecular beam epitaxy

被引：50

作者：

Lima, AP

Tabata, A

Leite, JR

Kaiser, S

Schikora, D

Schöttker, B

Frey, T

As, DJ

Lischka, K

机构：

[1] Univ Sao Paulo, Inst Fis, BR-05315970 Sao Paulo, Brazil

[2] Univ Regensburg, Inst Festkorperphys, D-93040 Regensburg, Germany

[3] Univ Gesamthsch Paderborn, Fachbereich Phys, D-33098 Paderborn, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

基金：

巴西圣保罗研究基金会;

关键词：

cubic InN; plasma-assisted MBE; semiconductor growth; nitrides semiconductors; nitridation;

D O I：

10.1016/S0022-0248(98)01359-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Cubic InN lavers were grown on the top of InAs buffer films on GaBs(0 0 1) substrates by plasma-assisted molecular beam epitaxy. The growth of the c-InN films was initiated by a nitridation of the InAs overlayers at 450 degrees C. The lattice constant of c-InN. measured by X-ray is equal to (4.98 +/- 0.01) Angstrom, in agreement to RHEED measurements made during the growth. Transmission electron microscopy measurements detected stacking faults in the InN layers parallel to the (1 1 1) InN planes. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：396 / 398

页数：3

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