A broadband 800 GHz Schottky balanced doubler

被引：42

作者：

Chattopadhyay, G ^{[1
]}

Schlecht, E ^{[1
]}

Gill, J ^{[1
]}

Martin, S ^{[1
]}

Maestrini, A ^{[1
]}

Pukala, D ^{[1
]}

Maiwald, F ^{[1
]}

Mehdi, I ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91125 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2002年 / 12卷 / 04期

关键词：

balanced doubler; broadband; millimeter waves; Schottky diode;

D O I：

10.1109/7260.993286

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A broadband planar Schottky balanced doubler at 800 GHz has been designed and built. The design utilizes two Schottky diodes in a balanced configuration on a 12 mum thick Gallium Arsenide (GaAs) substrate as a supporting frame. This broadband doubler (designed for 735 GHz to 850 GHz) uses a split waveguide block and has a relatively simple, fast, and robust assembly procedure. The doubler achieved approximate to 10% efficiency at 765 GHz, giving 1.1 mW of peak output power when pumped with about 9 mW of input power at room temperature.

引用

页码：117 / 118

页数：2