Ion tracks developed in polyimide resist on Si wafers as template for nanowires

Ion track technology makes it possible to produce low-cost templates for nanowires. In this study we have studied ion tracks in a polyimide resist on silicon. Spin coated, 1.5 mu m thick polyimide resist on 4 in. Si wafers was irradiated by Xe-129(27+) ions at low fluence. The irradiated resist was etched in sodium hypochlorite (NaClO) solution, and Ni nanowires were electroplated in the pores. Using scanning electron microscopy observations the ion track etch properties were obtained. The linear track etch rate of 0.6-1.0 mu m/min was calculated from the conical aspect ratio of the nanowire, and from the pore diameter at the surface at different etch times the bulk etch rate in the halo at a distance longer than 5 nm from the ion axis was found to be 0.3 nm/min, while at a long distance from the ion axis the track etching velocity of the virgin material was 0.01 nm/min. Taking into account the big difference in the track etch velocity between the latent track and the material outside, a latent track diameter of 11 nm could be estimated. Such a diameter value is in good agreement with a prediction obtained from an inelastic thermal spike model. Furthermore, fabrication of 1.5 mu m long magnetoresistive nanowires electroplated in ion tracks in the IC compatible polyimide resist may be a way to develop low-cost CMOS integrated magnetoresistive sensors. (c) 2005 Elsevier B.V. All rights reserved.