Measurement of Ge electrical parameters by analysing its optical dynamics

被引：12

作者：

Marchetti, S

Martinelli, M

Simili, R

Giorgi, M

Fantoni, R

机构：

[1] CNR, IFAM, I-56010 Ghezzano, PI, Italy

[2] ENEA, Dip INN, I-00044 Frascati, Italy

来源：

PHYSICA SCRIPTA | 2001年 / 64卷 / 05期

关键词：

D O I：

10.1238/Physica.Regular.064a00509

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

By using a dynamical model giving both the IR reflectivity and transmittivity of a semiconductor after an intense photo-plasma production, it is possible to derive several electrical parameters, as Auger recombination, radiative recombination and impurity recombination. The model has been tested on previous experimental works and used to analyse the 10.6 mum dynamical transmission reflection induced by a 1.06 ns excitation in Ge optical windows.

引用

页码：509 / 511

页数：3

共 9 条

[1] ULTRA-FAST SWITCHING OF INFRARED RADIATION BY LASER-PRODUCED CARRIERS IN SEMICONDUCTORS [J].