Enhanced tunnel magnetoresistance in Fe-doped Al2O3 barriers

被引：38

作者：

Jansen, R ^{[1
]}

Moodera, JS ^{[1
]}

机构：

[1] MIT, Francis Bitter Natl Magnet Lab, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 03期

关键词：

D O I：

10.1063/1.124388

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It is shown that the tunnel magnetoresistance of a Co/Al2O3/Ni80Fe20 magnetic tunnel junction is enhanced by delta doping of the oxide barrier with Fe. Enhancements by a factor of up to 1.25 are observed for Fe layers less than a monolayer thick, positioned halfway in the Al2O3 insulator. The effect exists not only at low temperature, but persists up to room temperature, albeit slightly weakened. Also, the enhancement remains present under the application of voltages as large as 0.6 V. Possible explanations are discussed. (C) 1999 American Institute of Physics. [S0003-6951(99)03129-0].

引用

页码：400 / 402

页数：3

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