Binding energy for the intrinsic excitons in wurtzite GaN

被引:108
作者
Shan, W
Little, BD
Fischer, AJ
Song, JJ
Goldenberg, B
Perry, WG
Bremser, MD
Davis, RF
机构
[1] OKLAHOMA STATE UNIV, DEPT PHYS, STILLWATER, OK 74078 USA
[2] HONEYWELL TECHNOL CTR, PLYMOUTH, MN 55441 USA
[3] N CAROLINA STATE UNIV, DEPT MAT SCI & ENGN, RALEIGH, NC 27695 USA
来源
PHYSICAL REVIEW B | 1996年 / 54卷 / 23期
关键词
D O I
10.1103/PhysRevB.54.16369
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present the results of an experimental study on the binding energy for intrinsic free excitons in wurtzite GaN. High-quality single-crystal GaN films grown by metalorganic chemical vapor deposition were used in this study. Various excitonic transitions in GaN were studied using reflectance measurements. The observation of a series of spectral features associated with the transitions involving the ground and excited exciton states allows us to make a straightforward estimate of exciton binding energy using the hydrogenic model. Our results yield a binding energy E(b) = 0.021 +/- 0.001 eV for the A and B excitons, and 0.023 +/- 0.001 eV for the C exciton in wurtzite GaN within the framework of the effective mass approximation.
引用
收藏
页码:16369 / 16372
页数:4
相关论文
共 27 条
[1]  
ASPNES DE, 1980, OPTICAL PROPERTIES S, pCHA4
[2]   Fundamental optical transitions in GaN [J].
Chen, GD ;
Smith, M ;
Lin, JY ;
Jiang, HX ;
Wei, SH ;
Khan, MA ;
Sun, CJ .
APPLIED PHYSICS LETTERS, 1996, 68 (20) :2784-2786
[3]   Effects of biaxial strain on exciton resonance energies of hexagonal GaN heteroepitaxial layers [J].
Chichibu, S ;
Shikanai, A ;
Azuhata, T ;
Sota, T ;
Kuramata, A ;
Horino, K ;
Nakamura, S .
APPLIED PHYSICS LETTERS, 1996, 68 (26) :3766-3768
[4]   ABSORPTION, REFLECTANCE, AND LUMINESCENCE OF GAN EXPITAXIAL LAYERS [J].
DINGLE, R ;
SELL, DD ;
STOKOWSKI, SE ;
ILEGEMS, M .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (04) :1211-+
[5]   DONOR-ACCEPTOR PAIR RECOMBINATION IN GAN [J].
DINGLE, R ;
ILEGEMS, M .
SOLID STATE COMMUNICATIONS, 1971, 9 (03) :175-&
[6]   INTENSITY OF OPTICAL ABSORPTION BY EXCITONS [J].
ELLIOTT, RJ .
PHYSICAL REVIEW, 1957, 108 (06) :1384-1389
[7]   Valence-band physics and the optical properties of GaN epilayers grown onto sapphire with wurtzite symmetry [J].
Gil, B ;
Briot, O ;
Aulombard, RL .
PHYSICAL REVIEW B, 1995, 52 (24) :17028-17031
[8]   TEMPERATURE-DEPENDENCE OF PHOTOREFLECTANCE LINE-SHAPES IN GAAS/ALGAAS MULTIPLE QUANTUM-WELLS [J].
GLEMBOCKI, OJ ;
SHANABROOK, BV .
SUPERLATTICES AND MICROSTRUCTURES, 1987, 3 (03) :235-238
[9]  
HELLWAGE KH, 1982, SEMICONDUCTORS PHYSI, P178
[10]   THEORETICAL AND EXPERIMENTAL EFFECTS OF SPATIAL DISPERSION ON OPTICAL PROPERTIES OF CRYSTALS [J].
HOPFIELD, JJ ;
THOMAS, DG .
PHYSICAL REVIEW, 1963, 132 (02) :563-&