Enhancement of tunnel magnetoresistance effect on junction with Co cluster layers in Coulomb blockade regime

被引：3

作者：

Fukumoto, Y ^{[1
]}

Kubota, H ^{[1
]}

Ando, Y ^{[1
]}

Miyazaki, T ^{[1
]}

机构：

[1] Tohoku Univ, Grad Sch Engn, Dept Appl Phys, Aoba Ku, Sendai, Miyagi 9808579, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1999年 / 38卷 / 8B期

关键词：

tunnel magnetoresistance effect; Coulomb blockade; cotunneling; triple junction; granular;

D O I：

10.1143/JJAP.38.L932

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tunnel magnetoresistance (TMR) effect in ferromagnet/granular/ferromagnet (FM/GR/FM) tunnel junctions was studied, where GR = Al-O/Co/Al-O or Al-O/Co/Al-O/Co/Al-O. The magnetoresistance (MR) ratio and the resistance of the latter junction increased with decreasing bias voltage at low temperatures. These increases should be due to the cotunneling effect in the Coulomb blockade regime. In contrast, the MR ratio of the former junction exhibited a maximum of 14% near 40 mV and decreased to 10% at 1 mV. The increase of resistance in the former junction at a lower voltage was smaller than that in the latter junction. The difference was discussed using a simple model.

引用

页码：L932 / L934

页数：3

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