Development of a CMOS compatible process for silicon miniature microphone with a high sensitivity

被引：1

作者：

Chen, J ^{[1
]}

Liu, LT ^{[1
]}

Li, ZJ ^{[1
]}

Tan, ZM ^{[1
]}

机构：

[1] Tsing Hua Univ, Inst Microelect, Beijing 100084, Peoples R China

来源：

INTERNATIONAL CONFERENCE ON SENSOR TECHNOLOGY (ISTC 2001), PROCEEDINGS | 2001年 / 4414卷

关键词：

micromachine; miniature microphone; corrugated diaphragm; CMOS compatible; integrate;

D O I：

10.1117/12.440209

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a CMOS compatible process for high sensitive silicon microphone has been proposed. Corrugated diaphragms have been introduced to reduce the initial stress. A MOS preamplifier with very high input impedance can be integrated in the same chip to meet the requirement on high output sensitivity, low power consumption and minimization. As a matter of fact, the polysilicon of the composite diaphragm can be patented as resistors and gates of MOSFET. All the CMOS process steps except the N well implantation and drive in can be placed after the microphone fabrication. This process is simple, efficient and seems very promising for future micro-acoustic systems.

引用

页码：276 / 279

页数：4