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Improved performance of SiC MESFETs using double-recessed structure

被引：70
作者：
Zhu, CL
Rusli
Tin, CC
Zhang, GH
Yoon, SF
Ahn, J
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore
[2] Auburn Univ, Dept Phys, Auburn, AL 36849 USA
来源：
MICROELECTRONIC ENGINEERING | 2006年 / 83卷 / 01期
关键词：
SiC; MESFET; double recessed structure;
D O I：
10.1016/j.mee.2005.10.054
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A double recessed SiC MESFET was proposed and its electrical performances were Studied by numerical simulation. Our simulated results showed that the saturation current of the double recessed structure is about 77% larger than that of the conventional structure. However, their threshold voltages are comparable and are -9.2 and -8.4 V for the double recessed and conventional structure, respectively. The output power density of the double recessed structure is about 37.5% larger than that of the conventional structure though its breakdown voltage is lower. The cut-off frequency (f(T)) and the maximum oscillation frequency (f(max)) of the double recessed structure are 15.3 and 70.6 GHz, respectively, which are higher than that of the conventional structure. Therefore, the double recessed 4H-SiC MESFET has superior DC and RF performances compared to the similar device based on the conventional structure. (c) 2005 Elsevier B.V. All rights reserved.
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页码：92 / 95
页数：4
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