A synchrotron study of the growth of vanadium oxide on Al2O3(0001)

被引：34

作者：

Biener, J

Bäumer, M

Madix, RJ ^{[1
]}

Liu, P

Nelson, EJ

Kendelewicz, T

Brown, GE

机构：

[1] Stanford Univ, Dept Chem Engn & Chem, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Geol & Environm Sci, Stanford, CA 94305 USA

[3] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

来源：

SURFACE SCIENCE | 1999年 / 441卷 / 01期

基金：

美国国家科学基金会;

关键词：

aluminium oxide; amorphous thin films; growth; single crystal surfaces; synchrotron radiation photoelectron spectroscopy; vanadium oxide; X-ray absorption spectroscopy;

D O I：

10.1016/S0039-6028(99)00728-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The electronic structure of vanadium oxide, supported by Al2O3(0001), was investigated in the submonolayer-to-multilayer coverage regime by means of XPS and NEXAFS. Vanadium was deposited at 300 K by evaporation in an oxygen ambient, A simultaneously multilayer growth mode was observed, and the resulting films are stable up to at least 900 K. Both the photoemission and NEXAFS data suggest the formation of V2O3. In addition, NEXAFS proves the existence of a short-range order, i.e., an octahedral coordination of vanadium cations with oxygen. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：1 / 9

页数：9

共 37 条

[1] SOFT-X-RAY ABSORPTION-SPECTROSCOPY OF VANADIUM-OXIDES [J].