Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers

被引：25

作者：

Peng, CS

Chen, H

Zhao, ZY

Li, JH

Dai, DY

Huang, Q

Zhou, JM

Zhang, YH

Tung, CH

Sheng, TT

Wang, J

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

[2] Chinese Acad Sci, Ctr Condensed Matter Phys, Beijing 100080, Peoples R China

[3] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

[4] Inst Microelect, Singapore, Singapore

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

dislocation; stacking faults; vacancy; strain relaxation; silicon; germanium;

D O I：

10.1016/S0022-0248(98)01399-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We have developed a low-temperature (LT) growth technique. Even with Ge fraction x upto 90%, the total thickness of fully relaxed GexSi1-x buffers can he reduced to 1.7 mu m with dislocation density lower than 5 x 10(6) cm(-2). The surface roughness is no more than 6 nm. The strain relaxation is quite inhomogeneous From the beginning. Stacking faults generate and form the mismatch dislocations in the interface of GeSi/LT-Si. (C) 1999 Elsevier Science B.V. All rights reserved.

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收藏

页码：530 / 533

页数：4

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