Room temperature magnetic (Ga,Mn)N: a new material for spin electronic devices

A new dilute magnetic semiconductor (Ga,Mn)N grown by metal organic chemical vapor deposition (MOCVD) is reported. Vibrating sample magnetometer (VSM) and extraordinary Hall effect (EHE) measurements verified a ferromagnetic component at room temperature. The direction of the easy axis and the Curie temperature varies with the growth conditions, the latter ranging from 38 degreesC to 75 degreesC. Secondary ion mass spectroscopy (SIMS) confirms diffusion of Mn into the GaN to a depth of 380 Angstrom. (C) 2001 Elsevier Science B.V. All rights reserved.