Fabrication of ferroelectric Pb(Zr,Ti)O3 thin films by liquid delivery metalorganic chemical vapor deposition

Pb(Zr,Ti)O-3 (PZT) thin films were deposited at the substrate temperature of 550 C by liquid delivery metalorganic chemical vapor deposition (MOCVD). A novel Zr precursor, Zr-isobutyry-pivolylmethane [Zr(DIBM)(4)]/(Tetrahydrofuran [THF]), was used as a Zr source, and Pb-bis-dipivaloylmethane [Pb(DPM)(2)]/THF and Ti(OiPr)(2)(DPM)(2)/THF were used as Pb and Ti sources, respectively. The Zr content of the deposited films was controlled by changing the supply rate of the Zr source. The molar ratio Zr/(Zr-+-Ti) of the films was 0.35 when the molar supply rates of Ti and Zr sources were set at 51 and 50 mumol/min, respectively. The properties of the films were changed by changing the supply rate of the Pb source slightly. The PZT films deposited at the Pb supply rate of 56 mumol/min exhibited good shape hysteresis loop shape. The 2P(r) and 2E(c) of the films with a thickness of 480 nm were 70 muC/cm(2) and 125 kV/cm, respectively. The deposition rate was approximately 12 nm/ min.