Electrical and photoelectrical properties of P3HT/n-Si hybrid organic-inorganic heterojunction solar cells

被引：34

作者：

Brus, V. V. ^{[1
,2
]}

Zellmeier, M. ^{[1
]}

Zhang, X. ^{[1
]}

Greil, S. M. ^{[1
]}

Gluba, M. ^{[1
]}

Toefflinger, A. J. ^{[1
]}

Rappich, J. ^{[1
]}

Nickel, N. H. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, Inst Si Photovolta, D-12489 Berlin, Germany

[2] Chernivtsi Natl Univ, Dept Elect & Energy Engn, UA-58012 Chernovtsy, Ukraine

来源：

ORGANIC ELECTRONICS | 2013年 / 14卷 / 11期

关键词：

Hybrid solar cell; Heterojunction; Current transport; Quantum efficiency; NGE-PGAAS HETEROJUNCTIONS; OPEN-CIRCUIT VOLTAGE; CDTE;

D O I：

10.1016/j.orgel.2013.07.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A detail analysis of electrical and photoelectrical properties of hybrid organic-inorganic heterojunction solar cells poly(3-hexylthiophene) (P3HT)/n-Si, fabricated by spin-coating of the polymeric thin film onto oxide passivated Si(100) surface, was carried out within the temperature ranging from 283 to 333 K. The dominating current transport mechanisms were established to be the multistep tunnel-recombination and space charge limited current at forward bias and leakage current through the shunt resistance at reverse bias. A simple approach was developed and successfully applied for the correct analysis of the high frequency C-V characteristics of hybrid heterojunction solar cells. The P3HT/n-Si solar cell under investigation possessed the following photoelectric parameters: J(sc) = 16.25 mA/cm(2), V-oc = 0.456 V, FF = 0.45, eta = 3.32% at 100 mW/cm(2) AM 1.5 illumination. The light dependence of the current transport mechanisms through the P3HT/n-Si hybrid solar cells is presented quantitatively and discussed in detail. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：3109 / 3116

页数：8

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