Raman characteristics of carbon nitride synthesized by nitrogen-ion-beam-assisted pulsed laser deposition

被引：13

作者：

Chen, ZY ^{[1
]}

Zhao, JP ^{[1
]}

Yano, T ^{[1
]}

Ooie, T ^{[1
]}

机构：

[1] Shikoku Natl Ind Res Inst, Takamatsu, Kagawa 7610395, Japan

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2002年 / 74卷 / 02期

关键词：

D O I：

10.1007/s003390100859

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Raman characteristics of carbon nitride films synthesized by nitrogen-ion-beam-assisted pulsed laser deposition were investigated. In addition to the D (disorder) band and G (graphitic) band commonly observed in carbon nitride films, two Raman bands located at 1080-1100 and 1465-1480 cm(-1) were found from our carbon nitride films. These two bands were well matched with the predicted Raman frequencies for beta-C3N4 and the observed Raman bands reported for carbon nitride films, indicating their relation to carbon-nitrogen stretching vibrations. Furthermore, the relative intensity ratio of the two Raman bands to the D and G bands increased linearly with increasing nitrogen content of the carbon nitride films.

引用

页码：213 / 216

页数：4

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