Pure carbon nanoscale devices: Nanotube heterojunctions

被引:765
作者
Chico, L
Crespi, VH
Benedict, LX
Louie, SG
Cohen, ML
机构
[1] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720
[2] UNIV CALIF BERKELEY,LAWRENCE BERKELEY LAB,DIV SCI MAT,BERKELEY,CA 94720
关键词
D O I
10.1103/PhysRevLett.76.971
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Introduction of pentagon-heptagon pair defects into the hexagonal network of a single carbon nanotube can change the helicity of the tube and alter its electronic structure. Using a tight-binding method to calculate the electronic structure of such systems we show that they behave as nanoscale metal/semiconductor or semiconductor/semiconductor junctions. These junctions could be the building blocks of nanoscale electronic devices made entirely of carbon.
引用
收藏
页码:971 / 974
页数:4
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