Elaboration of Bi2Te3 by metal organic chemical vapor deposition

被引：57

作者：

Giani, A ^{[1
]}

PascalDelannoy, F ^{[1
]}

Boyer, A ^{[1
]}

Foucaran, A ^{[1
]}

Gschwind, M ^{[1
]}

Ancey, P ^{[1
]}

机构：

[1] IMRA EUROPE SA,F-06904 SOPHIA ANTIPOLIS,FRANCE

来源：

THIN SOLID FILMS | 1997年 / 303卷 / 1-2期

关键词：

chemical vapour deposition; bismuth; tellurium;

D O I：

10.1016/S0040-6090(97)00089-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bi2Te3 layers were elaborated for the first time using metal organic chemical vapor deposition. The films composition is stoichiometric when the following conditions are verified: substrate temperature lower than 500 degrees C, VI/V ratio greater than 3, TMBi partial pressure lower than 2 x 10(-4) atm. By X-ray diffraction and MEB observation, we noticed the polycrystalline structure of the layers. The high thermoelectric power (+190 mu V K-1 for the p-type layer and -94 mu V K-1 for the n-type layer) of this material is promising for device applications. (C) 1997 Elsevier Science S.A.

引用

页码：1 / 3

页数：3

共 12 条

[1] BOYER A, 1991, SENSOR ACTUAT A-PHYS, V25, P637
[2] CRYSTAL GROWTH + ORIENTATION IN SPUTTERED FILMS OF BISMUTH TELLURIDE
FRANCOMBE, MH
[J]. PHILOSOPHICAL MAGAZINE, 1964, 10 (108): : 989 - &
[3] ROOM-TEMPERATURE MOCVD OF SB2TE3 FILMS AND SOLUTION PRECIPITATION OF M2TE3 (M=SB, BI) POWDERS VIA A NOVEL (N,N-DIMETHYLAMINO)TRIMETHYLSILANE ELIMINATION-REACTION
GROSHENS, TJ
GEDRIDGE, RW
LOWEMA, CK
[J]. CHEMISTRY OF MATERIALS, 1994, 6 (06) : 727 - 729
[4] LOVETT DR, 1977, SEMIMETALS NARROW BA, P181
[5] OPTIMAL CRYSTAL-GROWTH CONDITIONS OF THIN-FILMS OF BI2TE3 SEMICONDUCTORS
MZERD, A
SAYAH, D
TEDENAC, JC
BOYER, A
[J]. JOURNAL OF CRYSTAL GROWTH, 1994, 140 (3-4) : 365 - 369
[6] MZERD A, 1995, SENSOR ACTUAT A-PHYS, V46, P387
[7] ROWE DM, 1983, MODERN THERMOELECTRI, P103
[8] OPTICAL AND ELECTRICAL CHARACTERIZATION OF THICK GASB BUFFER LAYERS GROWN ON 2-IN GAAS WAFERS
ROYO, F
GIANI, A
PASCALDELANNOY, F
GOUSKOV, L
MALZAC, JP
CAMASSEL, J
[J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1994, 28 (1-3): : 169 - 173
[9] PRESSURE-INDUCED PHASE-TRANSITION IN SB2TE3
SAKAI, N
KAJIWARA, T
TAKEMURA, K
MINOMURA, S
FUJII, Y
[J]. SOLID STATE COMMUNICATIONS, 1981, 40 (12) : 1045 - 1047
[10] SHING YH, 1983, J VAC SCI TECHNOL A, V2, P503

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