Current-induced magnetization reversal in nanopillars with perpendicular anisotropy

被引:1110
作者
Mangin, S
Ravelosona, D
Katine, JA
Carey, MJ
Terris, BD
Fullerton, EE
机构
[1] Hitachi Global Storage Technol, San Jose Res Ctr, San Jose, CA 95120 USA
[2] UHP Nancy 1, CNRS, UMR 7556, Phys Mat Lab, F-54506 Vandoeuvre Les Nancy, France
[3] Univ Paris 11, CNRS, UMR 8622, Inst Elect Fondamentale, F-91405 Orsay, France
关键词
D O I
10.1038/nmat1595
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Devices that show a magnetic anisotropy normal to the film surface hold great promise towards faster and smaller magnetic bits in data-storage applications. We describe an experimental demonstration of current-induced magnetic reversal of nanopillars with perpendicular anisotropy and high coercive fields. The best results are observed for Co/Ni multilayers, which have higher giant magnetoresistance values and spin- torque efficiencies than Co/Pt multilayers. The reference layers were designed to have significantly higher anisotropy allowing a complete current-field phase diagram of the free-layer reversal to be explored. The results are compared to micromagnetic modelling of the free layer that, depending on the bias current and applied field, details regions of irreversible magnetic switching, coherent and incoherent spin waves, or static non-uniform magnetization states. This ability to manipulate high-anisotropy magnetic elements could prove useful for a range of spintronic applications.
引用
收藏
页码:210 / 215
页数:6
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