Deposition of Ta2O5 and (TiO2)-(Ta2O5) films from Ta(OEt)4(DMAE) and Ti(OEt)2(DMAE)2, by IMOCVD

Ta2O5 and (TiO2)-(Ta2O5) films have been deposited on silicon at low temperature by Injection Metallorganic Chemical Vapor Deposition (IMOCVD) using Tantalum tetraetoxy dimethlaminoethoxide, Ta(OEt)(4)(DMAE) and Titanium bis-ethoxide bis-dimethylaminoehtoxide, Ti(OEt)(2)(DMAE)(2) as precusors. Oxygen was used in some cases as oxidizing agent; nevertheless, films were also obtained without oxygen. The influence of deposition conditions on the deposition process and structural properties of the films has been studied by FTIR, EPMA and XRD.