Polytypism of SiC and interfacial structure in SiCp/Al composites

被引：10

作者：

Fan, TX ^{[1
]}

Zhang, D

Shibayanagi, T

Naka, M

机构：

[1] Shanghai Jiao Tong Univ, State Key Lab Met Matrix Composites, Shanghai 200030, Peoples R China

[2] Osaka Univ, Joining & Welding Res Inst, Ibaraki 565, Japan

来源：

JOURNAL OF MATERIALS SCIENCE | 2002年 / 37卷 / 24期

关键词：

D O I：

10.1023/A:1021027731189

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present work, the polytypism of SiC and the interfacial structure between SiC and Al were investigated using X-ray diffraction (XRD) and high resolution transmission electron microscopy (HREM). It was approved that 15R could be juxtaposed with 6H stacking sequences in the same SiC reinforcement and a structural transformation zone was also observed. The Al4C3 compound can nucleate on SiC at the SiC/Al interface with the growth orientation parallel to the C axis of SiC. Mechanisms for the observed phenomena were also discussed in detail. (C) 2002 Kluwer Academic Publishers.

引用

页码：5191 / 5196

页数：6

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