Large gate leakage current in AlGaN/GaN high electron mobility transistors

被引：64

作者：

Mizuno, S ^{[1
]}

Ohno, Y ^{[1
]}

Kishimoto, S ^{[1
]}

Maezawa, K ^{[1
]}

Mizutani, T ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Quantum Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2002年 / 41卷 / 08期

关键词：

AlGaN/GaN HEMT; gate leakage current; electron tunneling; plasma treatment;

D O I：

10.1143/JJAP.41.5125

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A large gate leakage current in AlGaN/GaN high electron mobility transistors (HEMTs) was observed. Temperature dependence of I-g-V-g characteristics revealed that tunneling current is dominant in the leak age current. By introducing ECR plasma treatment before the gate metal deposition, the gate leakage current was reduced by two to, three orders of magnitude.

引用

页码：5125 / 5126

页数：2

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