Shallow acceptors in Ge/GeSi strained multilayer heterostructures with quantum wells

The impurity photoconductivity spectra of Ge/Ge1-xSix strained heterostructures with quantum wells are investigated. It is established that the built-in deformation in quantum-size Ge layers substantially changes the spectrum of shallow accepters, shifting it into the long-wavelength region of the far-IR range. In strong magnetic fields the photoconductivity lines are observed to split and shift as a function of the field. This makes it possible to carry out a classification of the transitions. (C) 1997 American Institute of Physics.