Substrate crosstalk in biCMOS mixed mode integrated circuits

A comparison of several crosstalk reduction schemes using two-dimensional device simulation and measurements on silicon has shown that while SOI based processes provide high isolation from crosstalk, fully junction isolated wells can provide equal or better crosstalk immunity at a lesser expense, Simple guard ring substrate contacts appear to be the technique best suited for preventing cross-talk at high operating frequencies. A lumped parameter equivalent circuit has also been developed to simulate fully junction isolated wells in SPICE.