Tailoring the Molecular Structure to Suppress Extrinsic Disorder in Organic Transistors

被引：44

作者：

Minder, Nikolas A. ^{[1
,2
]}

Lu, Shaofeng ^{[3
]}

Fratini, Simone ^{[4
,5
]}

Ciuchi, Sergio ^{[6
,7
]}

Facchetti, Antonio ^{[3
]}

Morpurgo, Alberto F. ^{[1
,2
]}

机构：

[1] Univ Geneva, DPMC, CH-1211 Geneva, Switzerland

[2] Univ Geneva, GAP, CH-1211 Geneva, Switzerland

[3] Polyera Corp, Skokie, IL 60077 USA

[4] CNRS, Inst Neel, F-38042 Grenoble 9, France

[5] Univ Grenoble 1, F-38042 Grenoble 9, France

[6] Univ Aquila, CNISM, Ist Sistemi Complessi CNR, I-67100 Coppito, Italy

[7] Univ Aquila, Dipartimento Fis, I-67100 Coppito, Italy

来源：

ADVANCED MATERIALS | 2014年 / 26卷 / 08期

基金：

瑞士国家科学基金会;

关键词：

organic single crystals; field-effect transistors; band-like transport; disorder; structure-property relationships; BAND-LIKE TRANSPORT; CHARGE-TRANSPORT; SINGLE-CRYSTALS; MOBILITY; SEMICONDUCTORS; PARAMETERS;

D O I：

10.1002/adma.201304130

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In organic field-effect transistors, the structure of the constituent molecules can be tailored to minimize the disorder experienced by charge carriers. Experiments on two perylene derivatives show that disorder can be suppressed by attaching longer core substituents - thereby reducing potential fluctuations in the transistor channel and increasing the mobility in the activated regime - without altering the intrinsic transport properties. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1254 / 1260

页数：7

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