Organic field-effect transistors with polarizable gate insulators

被引：197

作者：

Katz, HE ^{[1
]}

Hong, XM ^{[1
]}

Dodabalapur, A ^{[1
]}

Sarpeshkar, R ^{[1
]}

机构：

[1] Lucent Technol, Bell Labs, Murray Hill, NJ 07974 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 03期

关键词：

D O I：

10.1063/1.1427136

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A quasi-stable threshold voltage (V-t) shift is imparted onto field-effect transistors (FETs) with organic semiconductors and polymer dielectrics. Adjustment of V-t from accumulation mode to zero or depletion mode is demonstrated for both p-channel and n-channel FETs, and is accomplished by applying a depletion voltage to the gate prior to device operation. Hydrophobic dielectrics and dopant-resistant semiconductors were advantageous. A pixel circuit that utilizes this nonvolatile memory element is proposed. (C) 2002 American Institute of Physics.

引用

页码：1572 / 1576

页数：5

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