Atomic scale investigation of boron nanosegregation in FeAl intermetallics

被引:34
作者
Cadel, E [1 ]
Lemarchand, D
Gay, AS
Fraczkiewicz, A
Blavette, D
机构
[1] Univ Rouen, Fac Sci, GMP, CNRS,UMR 6634, F-76821 Mont St Aignan, France
[2] Ecole Mines, Ctr SMS, CNRS, URA 1884, F-42100 St Etienne, France
关键词
FeAl; segregation; boron; intermetallics; atom probe;
D O I
10.1016/S1359-6462(99)00106-2
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The atomic scale distribution of boron in FeAl alloys were observed by transmission electron microscopy. Emphasis is put on boron segregation to intragranular lattice defects. Field ion microscopy (FIM) combined to three-dimensional atom probe exhibited the presence of decorated planar defects. The boron concentration was as high as 40 at.% whereas aluminum was found depleted (10 at.%). The iron level remained constant. The diffusion of boron-vacancy complexes and their agglomeration on aluminum sites in {001} planes is a possible scenario for the formation of these boron-enriched/aluminum-depleted stacking faults.
引用
收藏
页码:421 / 426
页数:6
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