学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
Solid solubility limits of Ga and Al in ZnO
被引:128
作者
:
Yoon, MH
论文数:
0
引用数:
0
h-index:
0
机构:
Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
Yoon, MH
Lee, SH
论文数:
0
引用数:
0
h-index:
0
机构:
Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
Lee, SH
Park, HL
论文数:
0
引用数:
0
h-index:
0
机构:
Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
Park, HL
Kim, HK
论文数:
0
引用数:
0
h-index:
0
机构:
Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
Kim, HK
Jang, MS
论文数:
0
引用数:
0
h-index:
0
机构:
Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
Jang, MS
机构
:
[1]
Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
[2]
Pusan Natl Univ, RCDAMP, Pusan 609735, South Korea
[3]
Yonsei Univ, Dept Phys, Seoul 120749, South Korea
来源
:
JOURNAL OF MATERIALS SCIENCE LETTERS
|
2002年
/ 21卷
/ 21期
关键词
:
D O I
:
10.1023/A:1020841213266
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
The solid solubility limits of Al and Ga in ZnO was investigated. The crushed fine powders was pelletized with pressure of 5 MPa and reacted in an electric furnace at temperature of 1300°C for 5 h. The solubility of Al was found to be 2 mole%.
引用
收藏
页码:1703 / 1704
页数:2
相关论文
共 5 条
[1]
ZAO: an attractive potential substitute for ITO in flat display panels
Chen, M
论文数:
0
引用数:
0
h-index:
0
机构:
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Chen, M
Pei, ZL
论文数:
0
引用数:
0
h-index:
0
机构:
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Pei, ZL
Sun, C
论文数:
0
引用数:
0
h-index:
0
机构:
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Sun, C
Gong, J
论文数:
0
引用数:
0
h-index:
0
机构:
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Gong, J
Huang, RF
论文数:
0
引用数:
0
h-index:
0
机构:
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Huang, RF
Wen, LS
论文数:
0
引用数:
0
h-index:
0
机构:
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Wen, LS
[J].
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,
2001,
85
(2-3):
: 212
-
217
[2]
Stimulated emission and optical gain in ZnO epilayers grown by plasma-assisted molecular-beam epitaxy with buffers
Chen, YF
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Chen, YF
Tuan, NT
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Tuan, NT
Segawa, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Segawa, Y
Ko, H
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Ko, H
Hong, S
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Hong, S
Yao, T
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Yao, T
[J].
APPLIED PHYSICS LETTERS,
2001,
78
(11)
: 1469
-
1471
[3]
Optical and electrical properties of direct-current magnetron sputtered ZnO:Al films
Pei, ZL
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Pei, ZL
Sun, C
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Sun, C
Tan, MH
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Tan, MH
Xiao, JQ
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Xiao, JQ
Guan, DH
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Guan, DH
Huang, RF
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Huang, RF
Wen, LS
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Wen, LS
[J].
JOURNAL OF APPLIED PHYSICS,
2001,
90
(07)
: 3432
-
3436
[4]
Doping effects on optical properties of epitaxial ZnO layers determined by spectroscopic ellipsometry
Postava, K
论文数:
0
引用数:
0
h-index:
0
机构:
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Postava, K
Sueki, H
论文数:
0
引用数:
0
h-index:
0
机构:
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Sueki, H
Aoyama, M
论文数:
0
引用数:
0
h-index:
0
机构:
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Aoyama, M
Yamaguchi, T
论文数:
0
引用数:
0
h-index:
0
机构:
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Yamaguchi, T
Murakami, K
论文数:
0
引用数:
0
h-index:
0
机构:
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Murakami, K
Igasaki, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Igasaki, Y
[J].
APPLIED SURFACE SCIENCE,
2001,
175
: 543
-
548
[5]
Mechanisms behind green photoluminescence in ZnO phosphor powders
Vanheusden, K
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Vanheusden, K
Warren, WL
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Warren, WL
Seager, CH
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Seager, CH
Tallant, DR
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Tallant, DR
Voigt, JA
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Voigt, JA
Gnade, BE
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Gnade, BE
[J].
JOURNAL OF APPLIED PHYSICS,
1996,
79
(10)
: 7983
-
7990
←
1
→
共 5 条
[1]
ZAO: an attractive potential substitute for ITO in flat display panels
Chen, M
论文数:
0
引用数:
0
h-index:
0
机构:
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Chen, M
Pei, ZL
论文数:
0
引用数:
0
h-index:
0
机构:
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Pei, ZL
Sun, C
论文数:
0
引用数:
0
h-index:
0
机构:
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Sun, C
Gong, J
论文数:
0
引用数:
0
h-index:
0
机构:
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Gong, J
Huang, RF
论文数:
0
引用数:
0
h-index:
0
机构:
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Huang, RF
Wen, LS
论文数:
0
引用数:
0
h-index:
0
机构:
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Acad Sinica, Inst Met Res, Shenyang 110015, Peoples R China
Wen, LS
[J].
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY,
2001,
85
(2-3):
: 212
-
217
[2]
Stimulated emission and optical gain in ZnO epilayers grown by plasma-assisted molecular-beam epitaxy with buffers
Chen, YF
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Chen, YF
Tuan, NT
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Tuan, NT
Segawa, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Segawa, Y
Ko, H
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Ko, H
Hong, S
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Hong, S
Yao, T
论文数:
0
引用数:
0
h-index:
0
机构:
Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan
Yao, T
[J].
APPLIED PHYSICS LETTERS,
2001,
78
(11)
: 1469
-
1471
[3]
Optical and electrical properties of direct-current magnetron sputtered ZnO:Al films
Pei, ZL
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Pei, ZL
Sun, C
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Sun, C
Tan, MH
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Tan, MH
Xiao, JQ
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Xiao, JQ
Guan, DH
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Guan, DH
Huang, RF
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Huang, RF
Wen, LS
论文数:
0
引用数:
0
h-index:
0
机构:
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Chinese Acad Sci, Inst Met Res, Shenyang 110016, Peoples R China
Wen, LS
[J].
JOURNAL OF APPLIED PHYSICS,
2001,
90
(07)
: 3432
-
3436
[4]
Doping effects on optical properties of epitaxial ZnO layers determined by spectroscopic ellipsometry
Postava, K
论文数:
0
引用数:
0
h-index:
0
机构:
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Postava, K
Sueki, H
论文数:
0
引用数:
0
h-index:
0
机构:
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Sueki, H
Aoyama, M
论文数:
0
引用数:
0
h-index:
0
机构:
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Aoyama, M
Yamaguchi, T
论文数:
0
引用数:
0
h-index:
0
机构:
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Yamaguchi, T
Murakami, K
论文数:
0
引用数:
0
h-index:
0
机构:
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Murakami, K
Igasaki, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
Igasaki, Y
[J].
APPLIED SURFACE SCIENCE,
2001,
175
: 543
-
548
[5]
Mechanisms behind green photoluminescence in ZnO phosphor powders
Vanheusden, K
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Vanheusden, K
Warren, WL
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Warren, WL
Seager, CH
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Seager, CH
Tallant, DR
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Tallant, DR
Voigt, JA
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Voigt, JA
Gnade, BE
论文数:
0
引用数:
0
h-index:
0
机构:
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
TEXAS INSTRUMENTS INC,DALLAS,TX 75234
Gnade, BE
[J].
JOURNAL OF APPLIED PHYSICS,
1996,
79
(10)
: 7983
-
7990
←
1
→