Solid solubility limits of Ga and Al in ZnO

被引:128
作者
Yoon, MH
Lee, SH
Park, HL
Kim, HK
Jang, MS
机构
[1] Pusan Natl Univ, Dept Phys, Pusan 609735, South Korea
[2] Pusan Natl Univ, RCDAMP, Pusan 609735, South Korea
[3] Yonsei Univ, Dept Phys, Seoul 120749, South Korea
关键词
D O I
10.1023/A:1020841213266
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The solid solubility limits of Al and Ga in ZnO was investigated. The crushed fine powders was pelletized with pressure of 5 MPa and reacted in an electric furnace at temperature of 1300°C for 5 h. The solubility of Al was found to be 2 mole%.
引用
收藏
页码:1703 / 1704
页数:2
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    Chen, M
    Pei, ZL
    Sun, C
    Gong, J
    Huang, RF
    Wen, LS
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 85 (2-3): : 212 - 217
  • [2] Stimulated emission and optical gain in ZnO epilayers grown by plasma-assisted molecular-beam epitaxy with buffers
    Chen, YF
    Tuan, NT
    Segawa, Y
    Ko, H
    Hong, S
    Yao, T
    [J]. APPLIED PHYSICS LETTERS, 2001, 78 (11) : 1469 - 1471
  • [3] Optical and electrical properties of direct-current magnetron sputtered ZnO:Al films
    Pei, ZL
    Sun, C
    Tan, MH
    Xiao, JQ
    Guan, DH
    Huang, RF
    Wen, LS
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (07) : 3432 - 3436
  • [4] Doping effects on optical properties of epitaxial ZnO layers determined by spectroscopic ellipsometry
    Postava, K
    Sueki, H
    Aoyama, M
    Yamaguchi, T
    Murakami, K
    Igasaki, Y
    [J]. APPLIED SURFACE SCIENCE, 2001, 175 : 543 - 548
  • [5] Mechanisms behind green photoluminescence in ZnO phosphor powders
    Vanheusden, K
    Warren, WL
    Seager, CH
    Tallant, DR
    Voigt, JA
    Gnade, BE
    [J]. JOURNAL OF APPLIED PHYSICS, 1996, 79 (10) : 7983 - 7990