Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures

被引：109

作者：

Billeb, A ^{[1
]}

Grieshaber, W ^{[1
]}

Stocker, D ^{[1
]}

Schubert, EF ^{[1
]}

Karlicek, RF ^{[1
]}

机构：

[1] EMCORE CORP,SOMERSET,NJ 08873

来源：

APPLIED PHYSICS LETTERS | 1997年 / 70卷 / 21期

关键词：

D O I：

10.1063/1.119060

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Luminescence spectra of GaN epitaxial layers grown on sapphire display a strong intensity modulation of the below-band gap transitions and on the low-energy side of the near-band gap transition. The intensity modulation is attributed to a microcavity formed by the semiconductor-air and semiconductor-substrate interface. The microcavity effect is enhanced by using metallic reflectors which increase the cavity finesse. It is shown that microcavity effects can be used to determine the refractive index of the microcavity active material. Using this method, the GaN refractive index is determined and expressed analytically by a Sellmeir fit. (C) 1997 American Institute of Physics.

引用

页码：2790 / 2792

页数：3

共 19 条

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