Thorough investigation of Si-nanocrystal memories with high-k interpoly dielectrics for sub-45nm node Flash NAND applications

被引：25

作者：

Molas, G. ^{[1
]}

Bocquet, M. ^{[1
]}

Buckley, J. ^{[1
]}

Colonna, J. P. ^{[1
]}

Masarotto, L. ^{[1
]}

Grampeix, H. ^{[1
]}

Martin, F. ^{[1
]}

Vidal, V. ^{[1
]}

Toffoli, A. ^{[1
]}

Brianceau, P. ^{[1
]}

Vermande, L. ^{[1
]}

Scheiblin, P. ^{[1
]}

Gely, A. ^{[1
]}

Papon, A. M. ^{[1
]}

Auvert, G. ^{[1
]}

Perniola, L. ^{[1
]}

Licitra, C. ^{[1
]}

Veyron, T. ^{[1
]}

Rochat, N. ^{[1
]}

Bongiorno, C. ^{[2
]}

Lombardo, S. ^{[2
]}

De Salvo, B. ^{[1
]}

Deleonibus, S. ^{[1
]}

机构：

[1] CEA, LETI, 17 Rue Martyrs, F-38054 Grenoble 9, France

[2] CNR, IMM, Catania, Italy

来源：

2007 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2 | 2007年

关键词：

D O I：

10.1109/IEDM.2007.4418971

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper we show for the 1(st) time that Silicon nanocrystal (Si-ncs) memories with high-k (HfO2, Al2O3 and HfAlO) interpoly dielectrics (IPD) can offer excellent behaviour in the Fowler-Nordheim regime, with great relevance for future sub-45nm NAND memory generations. We significantly advance the state-of-the-art by showing a strict correlation between the different IPD properties and the performance obtained on memory transistors down to 90nm gate lengths. In particular the results demonstrate that HfAlO IPDs combine the fast p/e and good 10(5) cycles endurance behaviour of HfO2 and the long retention of Al2O3 with no activation up to 125 degrees C. Then, in order to boost the memory window, we also integrated a hybrid Si-nc/SiN layer floating gate, with a HfAlO based IPD. It is shown that a 6V del V-th can be achieved, with good retention and cycling behaviours.

引用

页码：453 / +

页数：3

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