Characterization of polycrystalline TlBr films for radiographic detectors

被引：36

作者：

Bennett, PR ^{[1
]}

Shah, KS ^{[1
]}

Cirigano, LJ ^{[1
]}

Klugerman, MB ^{[1
]}

Moy, LP ^{[1
]}

Olschner, F ^{[1
]}

Squillante, MR ^{[1
]}

机构：

[1] Radiat Monitoring Devices Inc, Watertown, MA USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1999年 / 46卷 / 03期

基金：

美国国家科学基金会; 美国国家卫生研究院;

关键词：

D O I：

10.1109/23.775525

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Vapor deposited films of thallium bromide are evaluated as potential photoconductive layers in new large-area radiographic detectors. The attractiveness of the material lies in iis inherent high effective atomic number and high density. Polycrystalline films up to 200 mu m have been grown and show a columnar structure with grains reaching 100 mu m in diameter. Current-voltage (IV) tests indicate a bulk resistivity of 10(9)-10(10) Omega . cm, limited by,ionic conduction. Instability of current with time is also observed, but it can be minimized with cooling. The films demonstrate high gain at relatively low field strengths as compared to other photoconductive layers. Benefits and drawbacks of TlBr are compared to other materials, and possible solutions are discussed.

引用

页码：266 / 270

页数：5

共 8 条

[1]

HOFSTADTER R, 1949, NUCLEONICS APR, P2

[2]

JAZURRAHMAN I, 1987, NUCL INSTRUM METH A, V261, P427, DOI 10.1016/0168-9002(87)90350-0

[3] BANDGAP DEPENDENCE AND RELATED FEATURES OF RADIATION IONIZATION ENERGIES IN SEMICONDUCTORS [J].