The effect of carbon on strain relaxation and phase formation in the Ti/Si1-x-yGexCy/Si contact system

被引：29

作者：

Eyal, A ^{[1
]}

Brener, R ^{[1
]}

Beserman, R ^{[1
]}

Eizenberg, M ^{[1
]}

Atzmon, Z ^{[1
]}

Smith, DJ ^{[1
]}

Mayer, JW ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,CTR SOLID STATE SCI,TEMPE,AZ 85287

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 01期

关键词：

D O I：

10.1063/1.118120

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the first study of interfacial reactions of a metal with Si1-x-yGexCy, epitaxially grown on Si. The Ti/Si1-x-yGexCy/Si (0<y<1.7%) contact system was studied after isochronal heat treatments from 500 to 800 degrees C. The results for Ti/Si1-xGex phase formation agree with recent published works. However, C incorporation in the epilayer causes a dramatic decrease in strain relaxation during the Ti reaction with the epilayer, a delay in the appearance of the C54 phase, a decreased Ge concentration in the silicide-germanide phases, and carbon accumulation (probably in the form of TIC) at the silicide-germanide/epilayer interface. Also, at high annealing temperatures, a roughing of the silicide-germanide/epilayer interface was detected for the C-containing samples. A possible explanation for the reduced strain relaxation is based on mobility of dislocations. (C) 1996 American Institute of Physics.

引用

页码：64 / 66

页数：3

共 21 条

[1] STABILITY OF C54 TITANIUM GERMANOSILICIDE ON A SILICON-GERMANIUM ALLOY SUBSTRATE [J].