Clamping effect on the microwave properties of ferroelectric thin films

Ferroelectric and paraelectric films deposited on dielectric and semiconductor substrates were studied at the frequency range 0.3-100 GHz and temperature interval 300-700 K in comparison with chemically equivalent bulk materials. A dielectric spectroscopy method helps to trace the change of dielectric polarization and dielectric loss mechanisms when the free-stress volume (bulk) ferroelectric is transformed into a thin planar layer (film) that is stressed by its forced accommodation to a rigid substrate. The change in bulk-film properties could be either favourable or an adverse factor for electronic devices.