Molecular-dynamics investigation of the surface stress distribution in a Ge/Si quantum dot superlattice

被引：43

作者：

Daruka, I ^{[1
]}

Barabási, AL

Zhou, SJ

Germann, TC

Lomdahl, PS

Bishop, AR

机构：

[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

[2] Univ Calif Los Alamos Natl Lab, Appl Theoret & Computat Phys Div, Los Alamos, NM 87545 USA

[3] Univ Calif Los Alamos Natl Lab, Div Theoret, Los Alamos, NM 87545 USA

来源：

PHYSICAL REVIEW B | 1999年 / 60卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.60.R2150

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The surface stress distribution in an ordered quantum dot superlattice is investigated using classical molecular dynamics simulations. We find that the surface stress field induced by various numbers (from 1 to 9) of Ge islands embedded in a Si(001) substrate is in good agreement with analytical expressions based on pointlike embedded force dipoles, explaining the tendency of layered arrays to form vertically aligned columns. The shea-ranged nature of this stress field implies that only the uppermost layers affect the surface growth and that their influence decreases rapidly with layer depth. [S0163-1829(99)52028-6].

引用

页码：R2150 / R2153

页数：4

共 24 条

[1] MESSAGE-PASSING MULTICELL MOLECULAR-DYNAMICS ON THE CONNECTION MACHINE 5 [J].