Excellent reliability of CoFe-IrMn spin valves

被引：26

作者：

Iwasaki, H

Saito, AT

Tsutai, A

Sahashi, M

机构：

[1] Toshiba, R and D Center, Materials and Devices Research Laboratories, Saiwai-ku, Kawasaki 210, Japan, 72, Horikawa-cho

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1997年 / 33卷 / 05期

关键词：

D O I：

10.1109/20.617783

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The thermal reliability of spin valve films with a CoZrNb/NiFe/CoFe free layer and a CoFe/IrMn pinned layer was investigated. Stable properties; including an MR ratio of 7.5 similar to 8 %, an exchange bias of 400 similar to 500 Oe in the pinned layer, an interlayer coupling of less than 10 Oe between the pinned and free layers, and soft magnetic properties of the free layer, were observed even after annealing for 100 hours at 270 degrees C. It was demonstrated that the IrMn/CoFe interface, as well as the CoFe/Cu interface, is extremely stable against interdiffusion. These films also showed an MR ratio of 5 % and an exchange bias of 200 Oe even at 160 degrees C.

引用

页码：2875 / 2877

页数：3

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