Generalized Einstein relation for disordered semiconductors - Implications for device performance

被引:265
作者
Roichman, Y [1 ]
Tessler, N [1 ]
机构
[1] Technion Israel Inst Technol, Dept Elect Engn, IL-32000 Haifa, Israel
关键词
D O I
10.1063/1.1461419
中图分类号
O59 [应用物理学];
学科分类号
摘要
The ratio between mobility and diffusion parameters is derived for a Gaussian-like density of states. This steady-state analysis is expected to be applicable to a wide range of organic materials (polymers or small molecules) as it relies on the existence of quasiequilibrium only. Our analysis shows that there is an inherent dependence of the transport in trap-free disordered organic materials on the charge density. The implications for the contact phenomena and exciton generation rate in light emitting diodes as well as channel width in field-effect transistors is discussed. (C) 2002 American Institute of Physics.
引用
收藏
页码:1948 / 1950
页数:3
相关论文
共 17 条
[1]   LANGEVIN-TYPE CHARGE-CARRIER RECOMBINATION IN A DISORDERED HOPPING SYSTEM [J].
ALBRECHT, U ;
BASSLER, H .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1995, 191 (02) :455-459
[2]   HOPPING TRANSPORT IN PROTOTYPICAL ORGANIC GLASSES [J].
BASSLER, H ;
SCHONHERR, G ;
ABKOWITZ, M ;
PAI, DM .
PHYSICAL REVIEW B, 1982, 26 (06) :3105-3113
[3]   Dispersive hole transport in poly(p-phenylene vinylene) [J].
Blom, PWM ;
Vissenberg, MCJM .
PHYSICAL REVIEW LETTERS, 1998, 80 (17) :3819-3822
[4]  
GHATAK KP, 1980, PHYS STATUS SOLIDI B, V99, pK55
[5]   DRIFT MOBILITIES IN AMORPHOUS CHARGE-TRANSFER COMPLEXES OF TRINITROFLUORENONE AND POLY-N-VINYLCARBAZOLE [J].
GILL, WD .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5033-5040
[6]   Non-Gaussian transport measurements and the Einstein relation in amorphous silicon [J].
Gu, Q ;
Schiff, EA ;
Grebner, S ;
Wang, F ;
Schwarz, R .
PHYSICAL REVIEW LETTERS, 1996, 76 (17) :3196-3199
[7]  
HORSCHE EM, 1987, PHYS REV B, V35, P1273
[8]   Transient electroluminescence of polymer light emitting diodes using electrical pulses [J].
Pinner, DJ ;
Friend, RH ;
Tessler, N .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (09) :5116-5130
[9]   DIFFUSION AND DRIFT OF CHARGE-CARRIERS IN A RANDOM POTENTIAL - DEVIATION FROM EINSTEIN LAW [J].
RICHERT, R ;
PAUTMEIER, L ;
BASSLER, H .
PHYSICAL REVIEW LETTERS, 1989, 63 (05) :547-550
[10]   AMBIPOLAR TRANSPORT IN AMORPHOUS-SEMICONDUCTORS IN THE LIFETIME AND RELAXATION-TIME REGIMES INVESTIGATED BY THE STEADY-STATE PHOTOCARRIER GRATING TECHNIQUE [J].
RITTER, D ;
ZELDOV, E ;
WEISER, K .
PHYSICAL REVIEW B, 1988, 38 (12) :8296-8304