60Gbit/s time-division multiplexer in SiGe-bipolar technology with special regard to mounting and measuring technique

被引：31

作者：

Moller, M ^{[1
]}

Rein, HM ^{[1
]}

Felder, A ^{[1
]}

Meister, TF ^{[1
]}

机构：

[1] SIEMENS AG,CORP RES & DEV MICROELECT,D-87130 MUNICH,GERMANY

来源：

ELECTRONICS LETTERS | 1997年 / 33卷 / 08期

关键词：

time division multiplexing; silicon-germanium;

D O I：

10.1049/el:19970442

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 2:1 lime-division multiplexer is presented which operates al up to 60Gbit/s. This is the highest data rate ever achieved by an integrated circuit in any technology. The output voltage swing is 0.5V(p-p) (for 50 Omega on-chip matching and 50 Omega external load). The chips were fabricated using an advanced SiGe-bipolar technology (f(T) = 68GHz) and then mounted on a comparatively simple measuring socket.

引用

页码：679 / 680

页数：2

共 8 条

[1]

BUSSMANN M, 1993, IEEE SOLID STATE CIR, P152

[2]

GOTTWALD E, 1996, P ICCT BEIJ CHIN MAY, P60

[3]

Meister T. F., 1995, P IEDM 1995, P739

[4]

MOLLER M, 1995, ELECTRON LETT, V17, P1431

[5] 46Gbit/s multiplexer and 40Gbit/s demultiplexer IC modules using InAlAs/InGaAs/InP HEMTs [J].

Otsuji, T ;

Yoneyama, M ;

Imai, Y ;

Yamaguchi, S ;

Enoki, T ;

Umeda, Y ;

Sano, E .

ELECTRONICS LETTERS, 1996, 32 (07) :685-686

[6]

REIN HM, 1996, IEEE J SOLID STATE C, V8, P1076

[7]

REIN HM, 1997, SPRING TOP M ULTR EL

[8]

WURZER M, 1997, IEEE INT SOL STAT CI, P122

← 1 →