On the application of XPS to ceria films grown by MOCVD using a fluorinated precursor

被引:22
作者
Chadwick, D [1 ]
McAleese, J [1 ]
Senkiw, K [1 ]
Steele, BCH [1 ]
机构
[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,DEPT MAT,CTR TECH CERAM,LONDON SW7 2BY,ENGLAND
关键词
D O I
10.1016/0169-4332(96)00548-X
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
MOCVD grown CeO2 films using the precursor Ce(fod)(4) (where fod-H = 1,1,1,2,2,3,3-heptafluoro-7,7-dimethyloctane-3,5-dione) have been analysed by XPS. Residual fluorine was found to be in the form of fluoride and an organo-related fluorine species which converted rapidly to fluoride under application of the XPS technique. At the same time the CeO2 spectrum developed the presence of Ce3+. The rate of conversion was found to be sample dependent.
引用
收藏
页码:417 / 420
页数:4
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