In-doped SrTiO3 ceramic thin films

We report the characterization of the ceramic SrIn0.1Ti0.9O3 thin film grown by laser molecular-beam epitaxy. The lattice constant is determined to be 0.3948 nm, slightly larger than that of the SrTiO3 substrate. Hall measurement confirms that this film is a p-type semiconductor either below 92 K or above 158 K. X-ray photoemission spectroscopy study shows that the width of the valence band of the p-type SrIn0.1Ti0.9O3 film is narrower than that of the n-type SrNb0.1Ti0.9O3 film. There is a 0.35 eV difference in the Fermi energy level of the two films. The electronic state of the surface layer of the SrIn0.1Ti0.9O3 film is found to be different from that of its interior. (C) 2002 American Institute of Physics.