Surface core-level shift photoelectron diffraction study of β-SiC(001)-c(2 x 2) surface

被引：9

作者：

Shimomura, M ^{[1
]}

Yeom, HW

Mun, BS

Fadley, CS

Hara, S

Yoshida, S

Kono, S

机构：

[1] Tohoku Univ, Sci Measurements Res Inst, Sendai, Miyagi 9808577, Japan

[2] Univ Tokyo, Res Ctr Spectrochem, Tokyo 1130033, Japan

[3] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

[4] Electrotech Lab, Tsukuba, Ibaraki 3058568, Japan

来源：

SURFACE SCIENCE | 1999年 / 438卷 / 1-3期

关键词：

photoelectron diffraction; silicon carbide; surface relaxation and reconstruction;

D O I：

10.1016/S0039-6028(99)00575-0

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Surface core-level shift energy scan photoelectron diffraction (PED) was used to distinguish the two structural models of the C-terminated beta-SiC(001)-c(2 x 2) surface under debate. An experimental FED curve of the surface C Is component is in good agreement only with the simulated curve of the unusual bridge dimer model denying the conventional dimer model. The optimized structural parameters of this bridge dimer model are 1.22, 1.84 and 2.7 Angstrom for the C-C, C-Si and Si-Si bond lengths, respectively, in agreement with recent theoretical calculations. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：237 / 241

页数：5

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